j , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SB921 description ? high collector current: lc= -7a ? low collector saturation voltage : vce(sat)= -0.5v(max)@lc= -4a ? complement to type 2sd1237 applications ? designed for large current switching applications. absolute maximum ratings(ta=25-c) symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak total power dissipation @ tg=25'c total power dissipation @ ta=25'c junction temperature storage temperature range value -120 -80 -6 -7 -12 40 1.75 150 -55-150 unit v v v a a w ?c ?c - ,-.. ? 2 fih: 1 base | 2 collector 3 emitter l ""' to-220c package ??q u 1 i t a f f_ - b p- ?*? v 'h ^erl '?:> k f h c 1 4 o: . diw a b c d f g h j k l q r s [) \l x~l l d - mm win 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 max 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 k. ? j *r*~ j nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions \\ithout notice. information furnished hy nj semi-conductors is believed to he both accurate and reliable at tile time ofuoiim to press. i hmevcr. nj semi-coiidiictors assumes no responsibilil) for anv errors or omissions discovered in its use." nj seini-conduclors encourages cusloiners to \erily that datasheets are current before placing orders. quality 5emi-conductors
silicon pnp power transistor 2SB921 electrical characteristics tc=25c unless otherwise specified symbol v(br)oeo v(br)cbo v(br)ebo vce(sat) icbo iebo hfe-i hfe-2 fy parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain?bandwidth product conditions lc= -1ma; rbe= lc=-1ma; ie=0 le=-1ma;lc=0 lc= -4a; ib= -0.4a vcb= -80v; ie= 0 veb= -4v; lc= 0 lc= -1a; vce= -2v lc= -4a; vce= -2v lc=-1a;voe=-5v min -80 -120 -6 70 30 typ. 20 max -0.5 -0.1 -0.1 280 unit v v v v ma ma mhz ? hpe-1 classifications q 70-140 r 100-200 s 140-280
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